- LM5112SD
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- 發(fā)布者:凌曄科技
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詳細信息
品牌:TI德州
封裝:DFN-6
批號:18+
數(shù)量*:278000
描述:LM5110 - Dual 5A Compound Gate Driver With Negative Output Voltage Capability
LM5112 - 器件與被比較器件具有相似功能,但并不功能等效。
LM5111 - Dual 5A Low Side Compound Gate Driver
LM5112-Q1
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
產(chǎn)品特性
LM5112-Q1 is Qualified for Automotive Applications
AEC-Q100 Grade 1 Qualified
Manufactured on an Automotive Grade Flow
Compound CMOS and Bipolar Outputs Reduce Output Current Variation
7-A Sink and 3-A Source Current
Fast Propagation Times: 25 ns (Typical)
Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load
Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
Supply Rail Undervoltage Lockout Protection
Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation
Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package
Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
深圳市凌曄科技有限公司
廣東省深圳市福田區(qū)華強廣場C座13L
Tel:13544017528
qq:869030400
E-mail:869030400@qq.com
封裝:DFN-6
批號:18+
數(shù)量*:278000
描述:LM5110 - Dual 5A Compound Gate Driver With Negative Output Voltage Capability
LM5112 - 器件與被比較器件具有相似功能,但并不功能等效。
LM5111 - Dual 5A Low Side Compound Gate Driver
LM5112-Q1
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
產(chǎn)品特性
LM5112-Q1 is Qualified for Automotive Applications
AEC-Q100 Grade 1 Qualified
Manufactured on an Automotive Grade Flow
Compound CMOS and Bipolar Outputs Reduce Output Current Variation
7-A Sink and 3-A Source Current
Fast Propagation Times: 25 ns (Typical)
Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load
Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
Supply Rail Undervoltage Lockout Protection
Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation
Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package
Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
深圳市凌曄科技有限公司
廣東省深圳市福田區(qū)華強廣場C座13L
Tel:13544017528
qq:869030400
E-mail:869030400@qq.com
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